Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
Dr. Ismail Kashkoush, JST’s new Chief Technology Officer, shares his thoughts as to the challenges and opportunities of his new job role - overseeing the development and strategy for JST’s engineering ...
Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...
While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...