Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect ...
A grand challenge in material science is to understand the correlation between intrinsic properties and defect dynamics. Radiation tolerant materials are in great demand for safe operation and ...
Layered double hydroxides (LDHs) are emerging as promising electrocatalysts for the oxygen evolution reaction (OER), a key barrier in clean hydrogen production. However, their catalytic performance ...
Scan diagnosis is an established method for identifying and locating semiconductor defects on devices that fail manufacturing test and on field returns. Effectively selecting the right devices for ...
The concept of zero defect manufacturing has been around for decades, arising first in the aerospace and defense industry. Since then, this manufacturing approach has been adopted by the automotive ...
*****PLEASE COORDINATE WITH SONJA D. WHITE, ONLY IN WRITING AT [email protected] OR FAX (256)961-9604, FOR QUOTE OR TECHNICAL CONCERNS. CONTACT INFORMATION IS ALSO IN THE BODY OF THIS ...
Silicon carbide (SiC) unipolar semiconductors are in wide commercial use, but their operations are limited by a trade-off relationship between breakdown voltage and specific resistance of the drift ...
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